sep.2000 out temp si gnd vn1 wn vnc f o br bnwvup v cc f o in th gnd out si gnd vn v cc f o in gnd out si gnd un v cc f o in gnd out si gnd v wp1 w p w fo v fo u fo v wpc v cc f o in gnd out si gnd v vp1 v p v vpc v cc f o in gnd out si gnd v up1 u p v upc v cc f o in gnd rf o = 1.5k ohm s nuts (6 typ.) t (4 typ.) d p a b k e 1234 5678 9101112 13 14 15 16 17 18 19 npb uvw j typ. n v u r p u m l - typ. m c g f h y xw z - typ. aa - typ. bb sq pin - typ. (19 places) cc f (4 places) terminal code 1. w fo 2. v wpc 3. w p 4. v wp1 5. v fo 6. v vpc 7. v p 8. v vp1 9. u fo 10. v upc 11. u p 12. v up1 13. br 14. f o 15. vnc 16. vn1 17. un 18. vn 19. wn detail a see detail a out si gnd v cc f o in gnd rf o description: mitsubishi intelligent power mod- ules are isolated base modules de- signed for power switching applica- tions operating at frequencies to 20khz. built-in control circuits pro- vide optimum gate drive and pro- tection for the igbt and free-wheel diode power devices. features: u complete output power circuit u gate drive circuit u protection logic C short circuit C over temperature C under voltage applications: u inverters u ups u motion/servo control u power supplies ordering information: example: select the complete part number from the table below -i.e. PM50RVA120 is a 1200v, 50 ampere intelligent power mod- ule. type current rating v ces amperes volts (x 10) pm 50 120 dimensions inches millimeters a 4.33 110.0 b 3.50 89.0 c 0.87 +0.04/-0.02 22.0 +1.0/-0.5 d 3.74 0.010 95.0 0.25 e 2.91 0.010 74.0 0.25 f 0.16 4.0 g 0.87 22.0 h 0.42 10.6 j 0.79 20.0 k 2.99 0.02 76.0 0.5 l 0.39 10.0 m 0.49 12.5 n 0.67 17.0 dimensions inches millimeters p 0.30 7.5 r 0.65 16.5 s m5 metric m5 t 0.22 dia. dia. 5.5 u 0.56 0.010 14.1 0.25 v 1.72 0.012 43.57 0.3 w 0.57 0.012 14.6 0.3 x 2.90 73.7 y 0.78 19.7 z 0.10 0.010 2.54 0.25 aa 1.37 0.010 3.49 0.25 bb 0.02 sq 0.64 sq cc 0.12 +0.04/-0.02 3.0 +1.0/-0.5 outline drawing and circuit diagram mitsubishi intelligent power modules PM50RVA120 flat-base type insulated package
sep.2000 mitsubishi intelligent power modules PM50RVA120 flat-base type insulated package absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units power device junction temperature t j -20 to 150 c storage temperature t stg -40 to 125 c case operating temperature t c -20 to 100 c mounting torque, m5 mounting screws 2.5 ~ 3.5 n m mounting torque, m5 main terminal screws 2.5 ~ 3.5 n m module weight (typical) 560 grams supply voltage (applied between p - n) v cc(surge) 1000 volts supply voltage protected by sc (v d = 13.5 ~16.5v, inverter part, t j = 125 c start) v cc(prot.) 800 volts isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms control sector supply voltage (applied between v up1 -v upc , v vp1 -v vpc , v wp1 -v wpc , v n1 -v nc )v d 20 volts input voltage (applied between u p -v upc , v p -v vpc , w p -v wpc , u n v n w n b r -v nc )v cin 20 volts fault output supply voltage (applied between f o -v nc , * fo -v *pc )v fo 20 volts fault output current (sink current at u fo , v fo , w fo and f o terminal) i fo 20 ma igbt inverter sector collector-emitter voltage (v d = 15v, v cin = 15v) v ces 1200 volts collector current, (t c = 25 c) i c 50 amperes peak collector current, (t c = 25 c) i cp 100 amperes collector dissipation (t c = 25 c) p c 338 watts brake sector collector-emitter voltage (v d = 15v, v cin = 15v) v ces 1200 volts collector current, (t c = 25 c) i c 15 amperes peak collector current, (t c = 25 c) i cp 30 amperes collector dissipation (t c = 25 c) p c 134 watts fwdi forward current (t c = 25 c) i f 15 amperes fwdi rated dc reverse voltage (t c = 25 c) v r(dc) 1200 volts
sep.2000 electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units control sector over current trip level brake part oc -20 c t j 125 c, v d = 15v 22 amperes short circuit trip level inverter part sc -20 c t j 125 c, v d = 15v 59 amperes short circuit trip level brake part 52 amperes short circuit current shut-off time t off(sc) v d = 15v 10 m s over temperature protection ot trip level 111 118 125 c (v d = 15v, lower arm) ot r reset level 90 100 110 c supply circuit under voltage protection uv trip level 11.5 12.0 12.5 volts (-20 c t j 125 c) uv r reset level 12.5 volts supply voltage v d applied between v up1 -v upc , 15 volts v vp1 -v vpc , v wp1 -v wpc , v n1 -v nc circuit current i d v d = 15v, v cin = 15v, v n1 -v nc 4460ma v d = 15v, v cin = 15v, v xp1 -v xpc 1318ma input on threshold voltage v th(on) applied between u p -v upc , v p -v vpc , 1.2 1.5 1.8 volts input off threshold voltage v th(off) w p -v wpc , u n v n w n b r -v nc 1.7 2.0 2.3 volts fault output current i fo(h) v d = 15v, v fo = 15v 0.01 ma i fo(l) v d = 15v, v fo = 15v 10 15 ma minimum fault output pulse width t fo v d = 15v 1.0 1.8 ms mitsubishi intelligent power modules PM50RVA120 flat-base type insulated package
sep.2000 mitsubishi intelligent power modules PM50RVA120 flat-base type insulated package electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units igbt inverter sector collector-emitter cutoff current i ces v ce = v ces , v d = 15v, t j = 25 c 1.0 ma v ce = v ces , v d = 15v, t j = 125 c 10.0 ma fwdi forward voltage v ec -i c = 50a, v d = 15v, v cin = 15v 2.50 3.50 volts collector-emitter saturation voltage v ce(sat) v d = 15v, v cin = 0v, i c = 50a, 2.65 3.30 volts pulsed, t j = 25 c v d = 15v, v cin = 0v, i c = 50a, 2.60 3.25 volts pulsed, t j = 125 c inductive load switching times t on 0.4 0.9 2.3 m s t rr v d = 15v, v cin = 0v ? 15v 0.2 0.3 m s t c(on) v cc = 600v, i c = 50a, 0.4 1.0 m s t off t j = 125 c 2.4 3.4 m s t c(off) 0.7 1.2 m s brake sector collector-emitter cutoff current i ces v ce = v ces , v d = 15v, t j = 25 c 1.0 ma v ce = v ces , v d = 15v, t j = 125 c 10.0 ma fwdi forward voltage v fm i f = 15a 2.50 3.50 volts collector-emitter saturation voltage v ce(sat) v d = 15v, v cin = 0v, i c = 15a, 2.50 3.30 volts t j = 25 c v d = 15v, v cin = 0v, i c = 15a, 2.20 3.20 volts t j = 125 c
sep.2000 mitsubishi intelligent power modules PM50RVA120 flat-base type insulated package thermal characteristics characteristic symbol condition min. typ. max. units junction to case thermal resistance r th(j-c)q each inverter igbt 0.37 c/watt r th(j-c)f each inverter fwdi 0.70 c/watt r th(j-c)q each brake igbt 0.93 c/watt r th(j-c)f each brake fwdi part 1.50 c/watt contact thermal resistance r th(c-f) case to fin per module, 0.027 c/watt thermal grease applied recommended conditions for use characteristic symbol condition value units supply voltage v cc applied across p-n terminals 800 volts v ce(surge) applied across c-e terminals 1000 volts v d applied between v up1 -v upc ,15 1.5 volts v n1 -v nc , v vp1 -v vpc , v wp1 -v wpc input on voltage v cin(on) applied between 0.8 volts input off voltage v cin(off) u p -v upc , v p -v vpc , w p -v wpc , u n v n w n b r -v nc 3 4.0 volts arm shoot-through blocking time t dead for ipm's each input signal 3 3.0 m s
sep.2000 inverter part mitsubishi intelligent power modules PM50RVA120 flat-base type insulated package collector current, i c , (amperes) collector-emitter voltage v ce(sat) , (volts) saturation voltage characteristics (typical) 0 204060 1.0 0 v d = 15v v cin = 0v 2.0 3.0 t j = 25 c t j = 125 c control supply voltage, v d , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturaton voltage characteristics (typical) 0 131517 1.0 0 2.0 3.0 i c = 50a v cin = 0v t j = 25 c t j = 125 c collector-emitter voltage, v ce(sat) , (volts) output characteristics (typical) 0 102030 20 0 13 40 collector current, i c , (amperes) 60 15 v d = 17v collector current, i c , (amperes) switching times, t on , t off , ( s) switching time vs. collector current (typical) 10 1 10 1 10 2 10 3 10 0 10 -1 t on v cc = 600v v d = 15v inductive load t off t j = 25 c t j = 125 c carrier frequency, f c , (khz) circuit current, i d , (ma) circuit current vs. carrier frequency 0 102030 50 0 v d = 15v 100 150 t j = 25 c p-side n-side emitter-collector voltage, v ec , (volts) emitter current, i e , (amperes) diode forward characteristics 10 2 10 1 10 0 t j = 25 c t j = 125 c v d = 15v v cin = 15v 0 1.0 2.0 3.0 collector current, i c , (amperes) reverse recovery time, t rr , ( s) reverse recovery current vs. collector current (typical) 10 1 10 1 10 2 10 3 10 -1 10 -2 i rr t rr v cc = 600v v d = 15v t j = 25 c t j = 125 c 10 3 10 1 10 0 reverse recovery current, i rr , (amperes) 10 0 10 2 collector current, i c , (amperes) switching energy, p sw(on) , p sw(off) , (mj/pulse) switching loss characteristics (typical) 10 2 10 1 10 2 10 3 10 0 10 1 10 -1 p sw(off) p sw(on) v cc = 600v v d = 15v inductive load t j = 25 c t j = 125 c p sw(off) collector current, i c , (amperes) switching times, t c(on) , t c(off) , ( s) switching time vs. collector current (typical) 10 1 10 1 10 2 10 3 10 0 10 -1 v cc = 600v v d = 15v inductive load t j = 25 c t j = 125 c t c(on) t c(off) t j = 25 o c v cin = 0v
sep.2000 inverter part mitsubishi intelligent power modules PM50RVA120 flat-base type insulated package junction temperature, t j , ( c) supply circuit under voltage protection trip reset level, uv t , uv r , (volts) control supply voltage trip-reset level temperature dependancy (typical) 20 100 180 11 0 13 15 v d = 15v uv t uv r -60 junction temperature, t j , ( c) fault output pulse width trip level, t fo (t j = 25 c) = 1.0 fault output pulse width vs. temperature (typical) 20 -60 100 180 0.8 0 1.0 1.2 v d = 15v junction temperature, t j , ( c) short circuit current trip level (t j = 25 c) = 1.0 over current trip level temperature dependency (typical) 20 -60 100 180 0.8 0 1.0 1.2 v d = 15v time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each fwdi) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 10 -2 10 -3 single pulse standard value = r th(j-c)f = 0.70 c/w time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each igbt) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 10 -2 10 -3 single pulse standard value = r th(j-c)q = 0.37 c/w control supply voltage, v d, (volts) short circuit current trip level, (v d = 15v) = 1.0 over current trip level vs. supply voltage (typical) 0 131517 0.8 0 1.0 1.2 t j = 25 c
sep.2000 brake part mitsubishi intelligent power modules PM50RVA120 flat-base type insulated package collector current, i c , (amperes) collector-emitter voltage v ce(sat) , (volts) saturation voltage characteristics (typical) 0 102030 1.0 0 v d = 15v v cin = 0v 2.0 3.0 t j = 25 c t j = 125 c control supply voltage, v d , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturaton voltage characteristics (typical) 0 131517 0 2.0 1.0 3.0 i c = 15a v cin = 0v t j = 25 c t j = 125 c collector-emitter voltage, v ce(sat) , (volts) output characteristics (typical) 0 1.5 3.0 4.5 5 0 13 10 collector current, i c , (amperes) 15 15 v d = 17v diode forward voltage, v ec , (volts) diode forward current, i e , (amperes) diode forward characteristics 10 2 10 1 10 0 t j = 25 c t j = 125 c v d = 15v v cin = 15v 0 1.0 2.0 3.0 time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each igbt) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 10 -2 10 -3 single pulse standard value = r th(j-c)q = 0.93 c/w time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each fwdi) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 10 -2 10 -3 single pulse standard value = r th(j-c)d = 1.50 c/w t j = 25 o c v cin = 0v
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